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1 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs march 2005 rev. 0 advanced* wv3eg128m72efsr-d3 1gb C 128mx72 ddr sdram registered w/pll, fbga description the wv3eg128m72efsr is a 128mx72 double data rate sdram memory module based on 512mb ddr sdram component. the module consists of eighteen 64mx8 ddr components in fbga packages mounted on a 184 pin fr4 substrate. synchronous design allows precise cycle control with the use of system clock. data i/o transactions are possible on both edges and burst lenths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. * this product is under development, is not quali? ed or characterized and is subject to change or cancellation without notice. features double-data-rate architecture ddr266 and ddr333 ? jedec design speci? cations bi-directional data strobes (dqs) differential clock inputs (ck & ck#) programmable read latency 2,2,5 (clock) programmable burst length (2,4,8) programmable burst type (sequential & interleave) edge aligned data output, center aligned data input auto and self refresh serial presence detect power supply: ? v cc = v ccq = +2.5v 0.2v (100, 133 and 166mhz) 184 pin dimm package pcb height: ? d3: 29.97mm (1.18") note: consult factory for availability of: ? lead-free products ? vendor source control options ? industrial temperature options operating frequencies ddr333 @cl=2.5 ddr266 @cl=2 ddr266 @cl=2.5 clock speed 166mhz 133mhz 133mhz cl-t rcd -t rp 2.5-3-3 2-2-2 2.5-3-3
2 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs march 2005 rev. 0 advanced wv3eg128m72efsr-d3 pin configuration pin symbol pin symbol pin symbol pin symbol 1v ref 47 dqs8 93 v ss 139 v ss 2 dq0 48 a0 94 dq4 140 dm8/dqs17 3v ss 49 cb2 95 dq5 141 a10 4dq150v ss 96 v ccq 142 cb6 5 dqs0 51 cb3 97 dm0/dqs9 143 v ccq 6 dq2 52 ba1 98 dq6 144 cb7 7v cc 53 dq32 99 dq7 145 v ss 8dq354v ccq 100 v ss 146 dq36 9 nc 55 dq33 101 nc 147 dq37 10 reset# 56 dqs4 102 nc 148 v cc 11 v ss 57 dq34 103 nc 149 dm4/dqs13 12 dq8 56 v ss 104 v ccq 150 dq38 13 dq9 59 ba0 105 dq12 151 dq39 14 dqs1 60 dq35 106 dq13 152 v ss 15 v ccq 61 dq40 107 dm1/dqs10 153 dq44 16 nc 62 v ccq 108 v cc 154 ras# 17 nc 63 we# 109 dq14 155 dq45 18 v ss 64 dq41 110 dq15 156 v ccq 19 dq10 65 cas# 111 cke1 157 cs0# 20 dq11 66 v ss 112 v ccq 158 cs1# 21 cke0 67 dqs5 113 nc 159 dm5/dqs14 22 v ccq 68 dq42 114 dq20 160 v ss 23 dq16 69 dq43 115 a12 161 dq46 24 dq17 70 v cc 116 v ss 162 dq47 25 dqs2 71 nc 117 dq21 163 nc 26 v ss 72 dq48 118 a11 164 v ccq 27 a9 73 dq49 119 dm2/dqs11 165 dq52 28 dq18 74 v ss 120 v cc 166 dq53 29 a7 75 nc 121 dq22 167 nc 30 v ccq 76 nc 122 a8 168 v cc 31 dq19 77 v ccq 123 dq23 169 dm6/dqs15 32 a5 78 dqs6 124 v ss 170 dq54 33 dq24 79 dq50 125 a6 171 dq55 34 v ss 80 dq51 126 dq28 172 v ccq 35 dq25 81 v ss 127 dq29 173 nc 36 dqs3 82 v ccid 128 v ccq 174 dq60 37 a4 83 dq56 129 dm3/dqs12 175 dq61 38 v cc 84 dq57 130 a3 176 v ss 39 dq26 85 v cc 131 dq30 177 dm7/dqs16 40 dq27 86 dqs7 132 v ss 178 dq62 41 a2 87 dq58 133 dq31 179 dq63 42 v ss 88 dq59 134 cb4 180 v ccq 43 a1 89 v ss 135 cb5 181 sa0 44 cb0 90 nc 136 v ccq 182 sa1 45 cb1 91 sda 137 ck0 183 sa2 46 v cc 92 scl 138 ck0# 184 v ccspd pin names a0-a12 address input (multiplexed) ba0-ba1 bank select address dq0-dq63 data input/output cb0-cb7 check bits dqs0-dqs8 data strobe input/output ck0 clock input ck0# clock input cke0, cke1 clock enable input cs0#, cs1# chip select input ras# row address strobe cas# column address strobe dm0-dm8 data-in mask we# write enable v cc power supply v ccq power supply for dqs v ss ground v ref power supply for reference v ccspd serial eeprom power supply sda serial data i/o scl serial clock sa0-sa2 address in eeprom v ccid v cc indenti? cation flag nc no connect reset# reset enable
3 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs march 2005 rev. 0 advanced wv3eg128m72efsr-d3 dm0/dqs9 dm1/dqs10 dq20 dq21 dq22 dq23 dq16 dq17 dq18 dq19 dm2/dqs11 dq28 dq29 dq30 dq31 dq24 dq25 dq26 dq27 dm3/dqs12 dq36 dq37 dq38 dq39 dq32 dq33 dq34 dq35 dm5/dqs14 dq44 dq45 dq46 dq47 dq40 dq41 dq42 dq43 dm6/dqs15 dq52 dq53 dq54 dq55 dq48 dq49 dq50 dq51 dq60 dq61 dq62 dq63 dq56 dq57 dq58 dq59 dm7/dqs17 rcs0# rcs1# dqs0 dqs5 dqs1 dqs6 dqs2 dqs3 dm6/dqs16 dqs7 dqs8 cb4 cb5 cb6 cb7 cb0 cb1 cb2 cb3 dqs4 dm4/dqs13 pck ras# cas# cke0 cke1 rcs1# cs1# ba0-ba1 a0-a12 cs0# rcs0# pck# reset# rba0-rba1 ra0-ra12 rras# rcas# rcke0 rwe# rcke1 we# ba0-ba1: sdrams a0-a12: sdrams ras#: sdrams cas#: sdrams cke: sdrams cke: sdrams we#: dqrams a0 sa0 serial pd sda a1 sa1 a2 sa2 v ref v ss ddr sdrams ddr sdrams pll ddr sdram ddr sdram ddr sdram ddr sdram ddr sdram ddr sdram ddr sdram ddr sdram ddr sdram register x 2 scl v ccq v cc ddr sdrams ddr sdrams ck0 ck0# 120 spd v ccspd wp dq4 dq5 dq6 dq7 dq0 dq1 dq2 dq3 dm i/o7 i/o6 i/o1 i/o0 dm i/o5 i/o4 i/o3 i/o2 i/o0 i/o1 i/o6 i/o7 i/o2 i/o3 i/o4 i/o5 cs# cs# dqs dqs dq12 dq13 dq14 dq8 dq9 dq10 dq11 dq15 dm i/o7 i/o6 i/o1 i/o0 dm i/o5 i/o4 i/o3 i/o2 i/o0 i/o1 i/o6 i/o7 i/o2 i/o3 i/o4 i/o5 cs# cs# dqs dqs dm i/o7 i/o6 i/o1 i/o0 dm i/o5 i/o4 i/o3 i/o2 i/o0 i/o1 i/o6 i/o7 i/o2 i/o3 i/o4 i/o5 cs# cs# dqs dqs dm i/o7 i/o6 i/o1 i/o0 dm i/o5 i/o4 i/o3 i/o2 i/o0 i/o1 i/o6 i/o7 i/o2 i/o3 i/o4 i/o5 cs# cs# dqs dqs dm i/o7 i/o6 i/o1 i/o0 dm i/o5 i/o4 i/o3 i/o2 i/o0 i/o1 i/o6 i/o7 i/o2 i/o3 i/o4 i/o5 cs# cs# dqs dqs dm i/o7 i/o6 i/o1 i/o0 dm i/o5 i/o4 i/o3 i/o2 i/o0 i/o1 i/o6 i/o7 i/o2 i/o3 i/o4 i/o5 cs# cs# dqs dqs dm i/o7 i/o6 i/o1 i/o0 dm i/o5 i/o4 i/o3 i/o2 i/o0 i/o1 i/o6 i/o7 i/o2 i/o3 i/o4 i/o5 cs# cs# dqs dqs dm i/o7 i/o6 i/o1 i/o0 dm i/o5 i/o4 i/o3 i/o2 i/o0 i/o1 i/o6 i/o7 i/o2 i/o3 i/o4 i/o5 cs# cs# dqs dqs dm i/o7 i/o6 i/o1 i/o0 dm i/o5 i/o4 i/o3 i/o2 i/o0 i/o1 i/o6 i/o7 i/o2 i/o3 i/o4 i/o5 cs# cs# dqs dqs r e g i s t e r functional block diagram note: all resistor values are 22? unless otherwise indicated.
4 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs march 2005 rev. 0 advanced wv3eg128m72efsr-d3 absolute maximum ratings parameter symbol value units voltage on any pin relative to v ss v in , v out -0.5 to 3.6 v voltage on v cc supply relative to v ss v cc , v ccq -1.0 to 3.6 v storage temperature t stg -55 to +150 c power dissipation p d 18 w short circuit current i os 50 ma note: permanent device damage may occur if absolute maximum ratings are exceeded. functional operation should be restricted to recommended operating condition. exposure to higher than recommended voltage for extended periods of time could affect device reliability dc characteristics 0c t a 70c, v cc = 2.5v 0.2v parameter symbol min max unit supply voltage (for device with nominal v cc of 2.5v) v cc 2.3 2.3 v i/o supply voltage v ccq 2.3 2.3 v i/o reference voltage v ref v ccq /2-50mv v ccq /2+50mv v i/o termination voltage (systems) v tt v ref -0.04 v ref +0.04 v input logic high voltage v ih (dc) v ref +0.15 v ccq +0.3 v input logic low voltage v il (dc) -0.3 v ref -0.15 v input voltage level, ck and ck# inputs v in (dc) -0.3 v ccq +0.3 v input differential voltage, ck and ck# inputs v id (dc) 0.3 v ccq +0.6 v input crossing point voltage, ck and ck# inputs v ix (dc) 1.15 1.35 v input leakage current i l -2 2 ua output leakage current i oz -5 5 ua output high current (normal strength driver); v out = v tt + 0.84v i oh -16.8 ma output high current (normal strength driver); v out = v tt - 0.84v i ol 16.8 ma output high current (half strength driver); v out = v tt + 0.45v i oh -9 ma output high current (half strength driver); v out = v tt - 0.45v i ol 9ma capacitance t a = 25c. f = 1mhz, v cc = 2.5v parameter symbol max unit input capacitance (a0-a12) c in1 11 pf input capacitance (ras#, cas#, we#) c in2 11 pf input capacitance (cke0, cke1) c in3 11 pf input capacitance (ck0#, ck0) c in4 12 pf input capacitance (cs0#, cs1#) c in5 11 pf input capacitance (dqm0-dqm8) c in6 15 pf input capacitance (ba0-ba1) c in7 11 pf data input/output capacitance (dq0-dq63)(dqs) c out 15 pf data input/output capacitance (cb0-cb7) c out 15 pf notes: 1. includes 25mv margin for dc offset on v ref , and a combined total of 50mv margin for all ac noise and dc offset on v ref , bandwidth limited to 20mhz. the dram must accommodate dram current spikes on v ref and internal dram noise coupled to v ref , both of which may result in v ref noise. v ref should be de-coupled with an inductance of 3nh. 2. v tt is not applied directly to the device. v tt is a system supply for signal termination resistors, is expected to be set equal to v ref , and must track variations in the dc level of v ref 3. v id is the magnitude of the difference between the input level on ck and the input level on ck#. 4. these parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in simulation. the ac and dc input speci? cations are relative to a v ref envelop that has been bandwidth limited to 200mhz. 5. the value of v ix is expected to equal 0.5*v ccq of the transmitting device and must track variations in the dc level of the same. 6. these charactericteristics obey the sstl-2 class ii standards.
5 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs march 2005 rev. 0 advanced wv3eg128m72efsr-d3 i dd specifications and test conditions recommended operating conditions, 0c t a 70c, v ccq = 2.5v 0.2v, v cc = 2.5v 0.2v includes ddr sdram component only parameter symbol conditions ddr333@ cl=2.5 max ddr266@ cl=2 max ddr266@ cl=2.5 max units operating current i dd0 one device bank; active - precharge; t rc =t rc (min); t ck =t ck (min); dq,dm and dqs inputs changing once per clock cycle; address and control inputs changing once every two cycles. 4140 4140 4140 ma operating current i dd1 one device bank; active-read-precharge burst = 2; t rc =t rc (min); t ck =t ck (min); l out = 0ma; address and control inputs changing once per clock cycle. 4680 4680 4680 ma precharge power- down standby current i dd2p all device banks idle; power-down mode; t ck =t ck (min); cke=(low) 180 180 180 rna idle standby current i dd2f cs# = high; all device banks idle; t ck =t ck (min); cke = high; address and other control inputs changing once per clock cycle. v in = v ref for dq, dqs and dm. 1620 1620 1620 ma active power-down standby current i dd3p one device bank active; power-down mode; t ck (min); cke=(low) 1260 1260 1260 ma active standby current i dd3n cs# = high; cke = high; one device bank; active- precharge; t rc =t ras (max); t ck =t ck (min); dq, dm and dqs inputs changing twice per clock cycle; address and other control inputs changing once per clock cycle. 1800 1800 1800 ma operating current i dd4r burst = 2; reads; continuous burst; one device bank active; address and control inputs changing once per clock cycle; t ck = t ck (min); l out = 0ma. 4770 4770 4770 ma operating current i dd4w burst = 2; writes; continuous burst; one device bank active; address and control inputs changing once per clock cycle; t ck =t ck (min); dq,dm and dqs inputs changing once per clock cycle. 4590 4590 4590 rna auto refresh current i dd5 t rc = t rc (min) 7020 7020 7020 ma self refresh current i dd6 cke 0.2v 180 180 180 ma operating current i dd7a four bank interleaving reads (bl=4) with auto precharge with t rc =t rc (min); t ck =t ck (min); address and control inputs change only during active read or write commands. 9090 9000 9000 ma
6 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs march 2005 rev. 0 advanced wv3eg128m72efsr-d3 i dd specifications and test conditions recommended operating conditions, 0c t a 70c, v ccq = 2.5v 0.2v, v cc = 2.5v 0.2v includes pll and register power parameter symbol conditions ddr333@ cl=2.5 max ddr266@ cl=2 max ddr266@ cl=2.5 max units operating current i dd0 one device bank; active - precharge; t rc =t rc (min); t ck =t ck (min); dq,dm and dqs inputs changing once per clock cycle; address and control inputs changing once every two cycles. 4725 4725 4725 ma operating current i dd1 one device bank; active-read-precharge burst = 2; t rc =t rc (min); t ck =t ck (min); l out = 0ma; address and control inputs changing once per clock cycle. 5265 5265 5265 ma precharge power- down standby current i dd2p all device banks idle; power-down mode; t ck =t ck (min); cke=(low) 180 180 180 rna idle standby current i dd2f cs# = high; all device banks idle; t ck =t ck (min); cke = high; address and other control inputs changing once per clock cycle. v in = v ref for dq, dqs and dm. 1930 1930 1930 ma active power-down standby current i dd3p one device bank active; power-down mode; t ck (min); cke=(low) 1260 1260 1260 ma active standby current i dd3n cs# = high; cke = high; one device bank; active- precharge; t rc =t ras (max); t ck =t ck (min); dq, dm and dqs inputs changing twice per clock cycle; address and other control inputs changing once per clock cycle. 2110 2110 2110 ma operating current i dd4r burst = 2; reads; continuous burst; one device bank active; address and control inputs changing once per clock cycle; t ck = t ck (min); l out = 0ma. 5355 5355 5355 ma operating current i dd4w burst = 2; writes; continuous burst; one device bank active; address and control inputs changing once per clock cycle; t ck =t ck (min); dq,dm and dqs inputs changing once per clock cycle. 5535 5175 5175 rna auto refresh current i dd5 t rc = t rc (min) 7640 7605 7605 ma self refresh current i dd6 cke 0.2v 455 455 455 ma operating current i dd7a four bank interleaving reads (bl=4) with auto precharge with t rc =t rc (min); t ck =t ck (min); address and control inputs change only during active read or write commands. 9675 9585 9585 ma
7 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs march 2005 rev. 0 advanced wv3eg128m72efsr-d3 i dd1 : operating current : one bank 1. typical case : v cc =2.5v, t=25c 2. worst case : v cc =2.7v, t=10c 3. only one bank is accessed with t rc (min), burst mode, address and control inputs on nop edge are changing once per clock cycle. i out = 0ma 4. timing patterns : ? ddr200 (100 mhz, cl=2) : t ck= 10ns, cl2, bl=4, t rcd= 2*t ck , t ras= 5*t ck read : a0 n r0 n n p0 n a0 n - repeat the same timing with random address changing; 50% of data changing at every burst ? ddr266 (133mhz, cl=2.5) : t ck= 7.5ns, cl=2.5, bl=4, t rcd= 3*t ck , t rc= 9*t ck , t ras= 5*t ck read : a0 n n r0 n p0 n n n a0 n - repeat the same timing with random address changing; 50% of data changing at every burst ? ddr266 (133mhz, cl=2) : t ck =7.5ns, cl=2, bl=4, t rcd =3*t ck , t rc =9*t ck , t ras =5*t ck read : a0 n n r0 n p0 n n n a0 n - repeat the same timing with random address changing; 50% of data changing at every burst ? ddr333 (166mhz, cl=2.5) : t ck =6ns, bl=4, t rcd =10*t ck , t ras =7*t ck read : a0 n n r0 n p0 n n n a0 n - repeat the same timing with random address changing; 50% of data changing at every burst i dd7a : operating current : four banks 1. typical case : v cc =2.5v, t=25c 2. worst case : v cc =2.7v, t=10c 3. four banks are being interleaved with t rc (min), burst mode, address and control inputs on nop edge are not changing. iout=0ma 4. timing patterns : ? ddr200 (100 mhz, cl=2) : t ck =10ns, cl2, bl=4, t rrd =2*t ck , t rcd =3*t ck , read with autoprecharge read : a0 n a1 r0 a2 r1 a3 r2 a0 r3 a1 r0 - repeat the same timing with random address changing; 100% of data changing at every burst ? ddr266 (133mhz, cl=2.5) : t ck =7.5ns, cl=2.5, bl=4, t rrd =3*t ck , t rcd =3*t ck read with autoprecharge read : a0 n a1 r0 a2 r1 a3 r2 n r3 a0 n a1 r0 - repeat the same timing with random address changing; 100% of data changing at every burst ? ddr266 (133mhz, cl=2) : t ck =7.5ns, cl2=2, bl=4, t rrd =2*t ck , t rcd =2*t ck read : a0 n a1 r0 a2 r1 a3 r2 n r3 a0 n a1 r0 - repeat the same timing with random address changing; 100% of data changing at every burst ? ddr333 (166mhz, cl=2.5) : t ck =6ns, bl=4, t rrd =3*t ck , t rcd =3*t ck , read with autoprecharge read : a0 n a1 r0 a2 r1 a3 r2 n r3 a0 n a1 r0 - repeat the same timing with random address changing; 100% of data changing at every burst detailed test conditions for ddr sdram i dd1 & i dd7a legend: a = activate, r = read, w = write, p = precharge, n = nop a (0-3) = activate bank 0-3 r (0-3) = read bank 0-3
8 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs march 2005 rev. 0 advanced wv3eg128m72efsr-d3 ddr sdram component electrical characteristics and recommended ac operating conditions 0c t a +70c; v cc = +2.5v 0.2v, v ccq = +2.5v 0.2v ac characteristics 335 262 265 parameter symbol min max min max min max units notes access window of dqs from ck, ck# t ac -0.7 +0.7 -0.75 +0.75 -0.75 +0.75 ns ck high-level width t ch 0.45 0.55 0.45 0.55 0.45 0.55 t ck 16 ck low-level width t cl 0.45 0.55 0.45 0.55 0.45 0.55 t ck 16 clock cycle time cl=3 t ck (3) 6 13 7.5 13 7.5 13 ns 22 cl=2.5 t ck (2.5) 6 12 7.5 12 7.5 12 ns 22 cl=2 t ck (2) 7.5 12 7.5 12 10 12 ns 22 dq and dm input hold time relative to dqs t dh 0.45 0.5 0.5 ns 14,17 dq and dm input setup time relative to dqs t ds 0.45 0.5 0.5 ns 14,17 dq and dm input pulse width (for each input) t dipw 1.75 1.75 1.75 ns 17 access window of dqs from ck, ck# t dqsck -0.6 +0.6 -0.75 +0.75 -0.75 +0.75 ns dqs input high pulse width t dqsh 0.35 0.35 0.35 t ck dqs input low pulse width t dqsl 0.35 0.35 0.35 t ck dqs-dq skew, dqs to last dq valid, per group, per access t dqsq 0.4 0.5 0.5 ns 13,14 write command to ? rst dqs latching transition t dqss 0.75 1.25 0.75 1.25 0.75 1.25 t ck dqs falling edge to ck rising - setup time t dss 0.2 0.2 0.2 t ck dqs falling edge from ck rising - hold time t dsh 0.2 0.2 0.2 t ck half clock period t hp t ch , t cl t ch , t cl t ch , t cl ns 18 data-out high-impedance window from ck, ck# t hz +0.7 +0.75 +0.75 ns 8,19 data-out low-impedance window from ck, ck# t lz -0.7 -0.75 -0.75 ns 8,20 address and control input hold time (fast slew rate) t ihf 0.75 0.90 0.90 ns 6 address and control input set-up time (fast slew rate) t isf 0.75 0.90 0.90 ns 6 address and control input hold time (slow slew rate) t ihs 0.8 1 1 ns 6 address and control input setup time (slow slew rate) t iss 0.8 1 1 ns 6 address and control input pulse width (for each input) t ipw 2.2 2.2 2.2 ns load mode register command cycle time t mrd 12 15 15 ns dq-dqs hold, dqs to ? rst dq to go non-valid, per access t qh t hp -t qhs t hp -t qhs t hp -t qhs ns 13,14 data hold skew factor t qhs 0.55 0.75 0.75 ns active to precharge command t ras 42 70,000 45 120,000 45 120,000 ns 15 active to read with auto precharge command t rap 18 15 20 ns active to active/auto refresh command period t rc 60 60 65 ns auto refresh command period t rfc 72 75 75 ns 21
9 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs march 2005 rev. 0 advanced wv3eg128m72efsr-d3 ddr sdram component electrical characteristics and recommended ac operating conditions (continued) notes 1-5, 7; notes appear following parameter tables; 0c t a +70c; v cc = +2.5v 0.2v, v ccq = +2.5v 0.2v ac characteristics 335 262 265 parameter symbol min max min max min max units notes active to read or write delay t rcd 18 20 20 ns precharge command period t rp 18 20 20 ns dqs read preamble t rpre 0.9 1.1 0.9 1.1 0.9 1.1 t ck 19 dqs read postamble t rpst 0.4 0.6 0.4 0.6 0.4 0.6 t ck active bank a to active bank b command t rrd 12 15 15 ns dqs write preamble t wpre 0.25 0.25 0.25 t ck dqs write preamble setup time t wpres 0 0 0 ns 10,11 dqs write postamble t wpst 0.4 0.6 0.4 0.6 0.4 0.6 t ck 9 write recovery time t wr 15 15 15 ns internal write to read command delay t wtr 111t ck average periodic refresh interval t refi 7.8 7.8 7.8 s 12 exit self refresh to non-read command t xsnr 75 75 75 ns exit self refresh to read command t xsrd 200 200 200 t ck
10 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs march 2005 rev. 0 advanced wv3eg128m72efsr-d3 12. the refresh period is 64ms. this equates to an average refresh rate of 15.625s (256mb component) or 7.8125s (512 mb component). however, an auto refresh command must be asserted at least once every 140.6s (256 mb component) or 70.3s (512mb component); burst refreshing or posting by the dram controller greater than eight refresh cycles is not allowed. 13. the valid data window is derived by achieving other speci? cations - t hp (t ck/2 ), t dqsq , and t qh (t qh = t hp - t qhs ). the data valid window derates directly proportional with the clock duty cycle and a practical data valid window can be derived. the clock is allowed a maximum duty cycled variation of 45/55. functionality is uncertain when operating beyond a 45/55 ratio. the data valid window derating curves are provided below for duty cycles ranging between 50/50 and 45/55. 14. referenced to each output group: x4 = dqs with dq0-dq4. 15. reads and writes with auto precharge are not allowed to be issued until t ras (min) can be satis? ed prior to the internal precharge command being issued. 16. jedec speci? es ck and ck# input slew rate must be > 1v/ns (2v/ns differentially). 17. dq and dm input slew rates must not deviate from dqs by more than 10%. if the dq/dm/dqs slew rate is less than 0.5v/ns, timing must be derated: 50ps must be added to t ds and t dh for each 100mv/ns reduction in slew rate. if slew rates exceed 4v/ns, functionality is uncertain. 18. t hp min is the lesser of t cl min and t ch min actually applied to the device ck and ck# inputs, collectively during bank active. 19. this maximum value is derived from the referenced test load. in practice, the values obtained in a typical terminated design may re? ect up to 310ps less for t hz (max) and last dvw. t hz (max) will prevail over the t dqsck (max) + t rpst (max) condition. t lz (min) will prevail over t dqsck (min) + pre (max) condition. 20. for slew rates greater than 1v/ns the (lz) transition will start about 310ps earlier. 21. cke must be active (high) during the entire time a refresh command is executed. that is, from the time the auto refresh command is registered, cke must be active at each rising clock edge, until t ref later. 22. whenever the operating frequency is altered, not including jitter, the dll is required to be reset. this is followed by 200 clock cycles (before read commands). notes 1. all voltages referenced to v ss 2. tests for ac timing, i dd , and electrical ac and dc characteristics may be conducted at normal reference / supply voltage levels, but the related speci? cations and device operations are guaranteed for the full voltage range speci? ed. 3. outputs are measured with equivalent load: output o u t p u t (v ( v out o u t ) reference r e f e r e n c e point p o i n t 50 5 0 ? v tt t t 30pf 3 0 p f 4. ac timing and i dd tests may use a v il -to-v ih swing of up to 1.5v in the test environment, but input timing is still referenced to v ref (or to the crossing point for ck/ck#), and parameter speci? cations are guaranteed for the speci? ed ac input levels under normal use conditions. the minimum slew rate for the input signals used to test the device is 1v/ns in the range between v il (ac) and v ih (ac). 5. the ac and dc input level speci? cations are de? ned in the sstl_ 2 standard (i.e., the receiver will effectively switch as a result of the signal crossing the ac input level, and will remain in that state as long as the signal does not ring back above [below] the dc input low [high] level). 6. command/address input slew rate = 0.5v/ns. for -75 with slew rates 1v/ns and faster, t is and t ih are reduced to 900ps. if the slew rate is less than 0.5v/ns, timing must be derated: t is has an additional 50ps per each 100mv/ns reduction in slew rate from the 500mv/ns. t ih has 0ps added, that is, it remains constant. if the slew rate exceeds 4.5v/ns, functionality is uncertain. 7. inputs are not recognized as valid until v ref stabilizes. exception: during the period before v ref stabilizes, cke 0.3 x v ccq is recognized as low. 8. t hz and t lz transitions occur in the same access time windows as valid data transitions. these parameters are not referenced to a speci? c voltage level, but specify when the device output is no longer driving (hz) and begins driving (lz). 9. the maximum limit for this parameter is not a device limit. the device will operate with a greater value for this parameter, but system performance (bus turnaround) will degrade accordingly. 10. this is not a device limit. the device will operate with a negative value, but system performance could be degraded due to bus turnaround. 11. it is recommended that dqs be valid (high or low) on or before the write command. the case shown (dqs going from high-z to logic low) applies when no writes were previously in progress on the bus. if a previous write was in progress, dqs could be high during this time, depending on t dqss .
11 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs march 2005 rev. 0 advanced wv3eg128m72efsr-d3 92 133.35 (5.25) 128.95 (5.076) 2x 3.00 (2x 0.118) 4x 4.00+/-0.1 64.77 (2.55) 1.80 (0.070) 3.80 (0.149) 6.35 (0.25) 4.175 (0.164) 2.175 (0.085) 49.53 (1.95) 120.65 (4.75) 6.35 1 1.0 0.05 (0.039 0.002) 1.27 (0.05) 0.20 0.15 (0.008 0.006) 2.50 (0.098) 184 93 3.99 max 0 0 . 2 1 1.27 +/-0.1 2x dia. 2.50 +0.1/-0.00 29.97 0.15 (1.18 0.006) 19.80 (0.779) 10.00 (0.393) (2x dia 0.098 + 0.004/-0.00) (0.25) (4x 0.157+/-0.004) (0.05+/-0.004) ) 2 7 4 . 0 ( (0.157 max) package dimensions for d3 * all dimensions are in millimeters and (inches) ordering information for d3 part number speed cas latency t rcd t rp height* wv3eg128m72efsr335d3 166mhz/333mb/s 2.5 3 3 29.97 (1.18") wv3eg128m72efsr262d3 133mhz/266mb/s 2 2 2 29.97 (1.18") wv3eg128m72efsr265d3 133mhz/266mb/s 2.5 3 3 29.97 (1.18") notes: ? consult factory for availability of lead-free products. (f = lead-free, g = rohs compliant) ? vendor speci? c part numbers are used to provide memory components source control. the place holder for this is shown as lo wer case x in the part numbers above and is to be replaced with the respective vendors code. consult factory for quali? ed sourcing options. (m = micron, s = samsun g & consult factory for others) ? consult factory for availability of industrial temperature (-40c to 85c) option
12 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs march 2005 rev. 0 advanced wv3eg128m72efsr-d3 part numbering guide wv 3 e g 128m 72 e f s r xxx d3 x f/g wedc memory ddr gold depth bus width x8 fbga 2.5v registered speed (mhz) package 184 pin component vendor name (m = micron) (s = samsung) f = lead-free, g = rohs compliant
13 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs march 2005 rev. 0 advanced wv3eg128m72efsr-d3 document title 1gb - 128mx72 ddr sdram registered w/pll, fbga revision history rev # history release date status rev 0 created 3-05 advanced

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